Current Areas of Research

Antimonide-based compound semiconductors for electronics

• InAs-Channel High-Electron-Mobility Transistors (HEMTs)
• (In)GaSb p-channel Field-Effect Transistors
• Antimonide-based Heterojunction Bipolar Transistor
• Heterostructure Barrier Varactors
• Low-Power pN THz Mixer Diode

Carbon Nanotubes and Graphene

• Carbon Nanomaterials

UHV Surface Science and IR Spectroscopy

• Ultra-High-Vacuum Surface Science
• Surface Infrared Spectroscopy

Modeling of Chemical Warfare Agents

• Quantum-Chemical Modeling of the Adsorption of Chemical Warfare Agents and Simulants

Nanowires, Nanoclusters, and Surface-Enhanced Raman Spectroscopy

• Growth and Surface Properties of Semiconductor and Metal Oxide Nanowires
• Application of dielectric/metal nanowire composites to Surface Enhanced Raman sensing.
• Self-Assembly of Gold Nanocluster Devices

Density Gradient Theory for Semiconductor Devices