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Facilities
The NRL Epicenter has four MBE systems as well as analysis chambers including STM. The inset is of an STM image of the spiral growth of GaSb on GaAs. Each terrace represents an atomic monolayer (0.3 nm).
- Semiconductor Growth
- MBE of GaSb, InAs, AlSb, GaAs, AlAs, InSb, (Al,Ga,In) (As,Sb) alloys (2-inch Riber 32P and 3-inch Riber 21T systems)
- In situ AsBr3 etching capability
- MBE chamber for oxides (expected in 2008; to be interconnected to III-V MBE chamber)
- Nanowire growth
- Carbon nanotube growth
- Proximal Probes
- Room and Low temperature Atomic Force Microscopy
- Ultra-High Vacuum STM
- UHV Surface Science
- X-ray Photoemission Spectroscopy (XPS)
- Auger electron spectroscopy (AES) and electron energy loss spectroscopy (ELS)
- Ultraviolet Photoemission Spectroscopy (UPS)
- Low-energy electron diffraction (LEED)
- Quadruple mass spectrometer for residual gas analysis.
- Scanning Electron Microscopy (SEM)
- Electron-beam induced-current (EBIC) microscopy
- Variable-temperature (5-330K) cathodoluminescence
- UHV cathodoluminescence
- Real-color imaging cathodoluminescence
- Optical Spectroscopies
- Photoluminescence (0.1-3.5 eV)
- Micro-photoluminescence spectroscopy
- Photoluminescence Excitation and Modulation Spectroscopy
- Photoluminescence Transient Spectroscopy
- Raman Scattering (Conventional, CCD and micro)
- Near-Field Optical Spectroscopy
- Infrared Spectroscopy and Interferometry
- Spin Resonance Techniques
- Optically Detected Magnetic Resonance (ODMR)
- Optically Detected Electron Spin Echo (ODESE)
- Optically Detected Electron-Nuclear Double Resonance (ENDOR)
- Electron Paramagnetic Resonance at 9 and 35 GHz
- Time-Resolved Faraday Rotation (TRFR)
- Transport Techniques
- Variable Temperature Hall (4-300K)
- Deep Level Transient Spectroscopy
- Sensor test facility
- High-resolution X-ray Diffraction
- Theory
- Ab Initio Electronic and Structure Calculations
- Tight Binding and Dynamical Matrix Studies
- Many Body studies and finite elements calculations
- Optical and Transport Properties of Semiconductor Nanostructures
- Device Modeling
Cathodoluminscence luminescence of 4H-SiC exhibiting several different kinds of crystallographic defects
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