Found 15 results
Filters: Author is J A Freitas Jr [Clear All Filters]
Efficient Incorporation of Mg in Solution Grown GaN Crystals. Applied Physics Express. 6(11). 2013.
Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2. Journal of Applied Physics. 112(1). 2012.
Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):33-37.. 2012.
Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):27-32.. 2012.
Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers. Journal of Applied Physics. 108. 2010.
Optical probing of low-pressure solution grown GaN crystal properties. Journal of Crystal Growth. 312:2564-2568.. 2010.
Properties of the state-of-the-art of bulk III-V Nitrides substrates and homoepitaxial layers. Journal of Physics D: Applied Physics. 43. 2010.
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage. Journal of Crystal Growth. 312:2616-2619.. 2010.
Cathodolumiensce study of the properties of stacking faults in 4H-SiC homoepitaxial layers. Applied Physics Letters. 94. 2009.
AIN bandgap temperature dependence from its optical properties. Journal of Crystal Growth. 310. 2008.
Semi-insulating GaN substrates for high-frequency device fabrication. Journal of Crystal Growth. 310:3968-3972.. 2008.
Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. Physica B. 401-402:327-330.. 2007.
Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters. 90. 2007.
Rare-earth chloride seeded growth of GaN nano- and micro-crystals. Applied Surface Science. 253:6157-6161.. 2007.