Found 44 results
Filters: Author is Boos, J B  [Clear All Filters]
2011
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett B, John BBoos, Saraswat KC.  2011.  Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning. Journal of Applied Physics. 109(11) 11-1226-0720.pdf (488.47 KB)
Ali A, Madan H, Agrawal A, Ramirez I, Misra R, John BBoos, Bennett B, Lindemuth J, Datta S.  2011.  Enhancement Mode Antimonide Quantum Well MOSFETs With High Electron Mobility and GHz Small-Signal Switching Performance. IEEE Electron Device Letters. 32:11689-11691. 11-1226-3596.pdf (510.44 KB)
Ali A, Madan H, Misra R, Agrawal A, Schiffer P, John BBoos, Bennett B, Datta S.  2011.  Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Non-Parabolicity Effect. IEEE Transactions on Electron Devices. 58:1397-1403. 11-1226-4621.pdf (1.07 MB)
Xia L, John BBoos, Bennett B, Ancona M, del Alamo JA.  2011.  Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5) 11-1226-0119.pdf (178.63 KB)
Nainani A, Yuan Z, Krishnamohan T, Bennett B, John BBoos, Reason M, Ancona M, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1) 11-1226-1829.pdf (804.41 KB)
Nainani A, Irisawa T, Yuan Z, Bennett B, John BBoos, Nishi Y, Saraswat KC.  2011.  Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb. IEEE Transactions on Electron Devices. 58(10) 11-1226-1830.pdf (1.35 MB)
Nainani A, Irisawa T, Bennett B, John BBoos, Ancona M, Saraswat KC.  2011.  Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141. 10-1226-1248.pdf (331.91 KB)

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