Found 35 results
Filters: Author is Bennett, B R  [Clear All Filters]
2011
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett BR, Boos JB, Saraswat KC.  2011.  Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning. Journal of Applied Physics. 109(11) 11-1226-0720.pdf (488.47 KB)
Ali A, Madan H, Agrawal A, Ramirez I, Misra R, Boos JB, Bennett BR, Lindemuth J, Datta S.  2011.  Enhancement Mode Antimonide Quantum Well MOSFETs With High Electron Mobility and GHz Small-Signal Switching Performance. IEEE Electron Device Letters. 32:11689-11691. 11-1226-3596.pdf (510.44 KB)
Ali A, Madan H, Misra R, Agrawal A, Schiffer P, Boos JB, Bennett BR, Datta S.  2011.  Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Non-Parabolicity Effect. IEEE Transactions on Electron Devices. 58:1397-1403. 11-1226-4621.pdf (1.07 MB)
Xia L, Boos JB, Bennett BR, Ancona MG, del Alamo JA.  2011.  Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5) 11-1226-0119.pdf (178.63 KB)
Nainani A, Yuan Z, Krishnamohan T, Bennett BR, Boos JB, Reason M, Ancona MG, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1) 11-1226-1829.pdf (804.41 KB)
Nainani A, Irisawa T, Yuan Z, Bennett BR, Boos JB, Nishi Y, Saraswat KC.  2011.  Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb. IEEE Transactions on Electron Devices. 58(10) 11-1226-1830.pdf (1.35 MB)
Nainani A, Irisawa T, Bennett BR, Boos JB, Ancona MG, Saraswat KC.  2011.  Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141. 10-1226-1248.pdf (331.91 KB)

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