Found 39 results
Filters: Author is Ancona, M G [Clear All Filters]
Analyte Kinetics in a Nanocluster-Based Chemiresistor. Sensors and Actuators B-chemical. 177. 2013.
Analyte kinetics in a nanocluster-based chemiresistor: A case study . Sensors and Actuators B Chemical. 177:936-946.. 2013.
Enhanced hole mobility and density in GaSb quantum wells. Solid State Electronics. 79:274-280.. 2013.
Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy. Microsystems Annual Research Conference (MARC).. 2013.
Bilayer Graphene by Bonding CVD Graphene to Epitaxial graphene. Journal of Vacuum Science and Technology B. 30. 2012.
Enhancing hole mobility in III-V semiconductors. Journal of Applied Physics. 111. 2012.
Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation. Journal of Applied Physics. 111(7). 2012.
High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm EOT. 48th Workshop on Compound Semiconductor Materials and Devices.. 2012.
High-k Gate Dielectics for III-N MIS-HEMTs. 48th Workshop on Compound Semiconductor Materials and Devices.. 2012.
High-k SrTiO3 Dielectric by Plasma-Assisted Atomic Layer Deposition. 48th Workshop on Compound Semiconductor Materials and Devices.. 2012.
High-Power Broadband Cascaded-TWT Development. 48th Workshop on Compound Semiconductor Materials and Devices.. 2012.
Nanodimensionally Driven Analyte Response Reversal in Gold Nanocluster Chemiresistor Sensing. Langmuir. 28(44):15438-15443.. 2012.
Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices. Journal of Computational Electronics. 10(1-2):65-97.. 2011.
Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5). 2011.
InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1). 2011.
Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141.. 2011.
Development of high-k dielectric for Antimonides & a sub 350°C III-V pMOSFET outperforming Ge. IEDM.. 2010.
Electron Transport in Graphene From a Diffusion-Drift Perspective. IEEE Transactions on Electron Devices. 57(3):681-689.. 2010.
Scaling Projections for Sb-Based p-Channel FETs. Solid State Electronics. 54:1349-1358.. 2010.
Compound semiconductors for low-power p-channel field-effect transistors. MRS Bulletin. 34:530-536.. 2009.
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits. Journal of Crystal Growth. 312:37-40.. 2009.
Fluorine-labeling as a diagnostic for thiol-ligand and gold nanocluster self-assembly. Analyst. 134(9):1790-1801.. 2009.
Antimonide diodes for low-power THz mixers. Applied Physics Letters. 92. 2008.
InAs-based Heterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material. Solid State Electronics. 52:1829-1832.. 2008.
Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057.. 2008.