Found 7 results
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Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2. Journal of Applied Physics. 112(1). 2012.
Recombination processes controlling the carrier lifetime in n(-)4H-SiC epilayers with low Z(1/2) concentrations. Journal of Applied Physics. 108. 2010.
Cathodolumiensce study of the properties of stacking faults in 4H-SiC homoepitaxial layers. Applied Physics Letters. 94. 2009.
Identification and carrier dynamics of the dominant lifetime limiting defect in n(-) 4H-SiC epitaxial layers. Phys. Status Solidi A: Applications and Materials Science. 206:2257-2272.. 2009.
Carrier Lifetime Measurements in n 4H-SiC Epilayers. Journal of Applied Physics. 103. 2008.
Lifetime limiting defects in n-4H-SiC epilayers. Applied Physics Letters. 88. 2006.
Photoionization Spectroscopy of deep defects responsible for current collapse in nitride-based FETs. Journal of Physics: Condensed Matter. 15:R1641-R1667.. 2003.