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Filters: Author is Sudarshan, T S [Clear All Filters]
Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers. Journal of Applied Physics. 108. 2010.
Recombination processes controlling the carrier lifetime in n(-)4H-SiC epilayers with low Z(1/2) concentrations. Journal of Applied Physics. 108. 2010.
Cathodolumiensce study of the properties of stacking faults in 4H-SiC homoepitaxial layers. Applied Physics Letters. 94. 2009.