Found 208 results
Ultrafast optical control of entanglement between two quantum dot spins. Nature Physics. 7:223-229.. 2010.
Antibonding ground states in InAs quantum dot molecules. Physical Review Letters. 102. 2009.
Cathodolumiensce study of the properties of stacking faults in 4H-SiC homoepitaxial layers. Applied Physics Letters. 94. 2009.
Compound semiconductors for low-power p-channel field-effect transistors. MRS Bulletin. 34:530-536.. 2009.
Computational Study of Environmental Effects in the Adsorption of DMMP, Sarin and VX on γ-Al2O3 Surfaces: Hydrolysis and Photolysis. Journal of Physical Chemistry B. 113:1917-1930.. 2009.
Controlled growth of parallel oriented ZnO arrays on Ga2O3 nanowires. Crystal Growth & Design. 9(2):1164-1169.. 2009.
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits. Journal of Crystal Growth. 312:37-40.. 2009.
Directing Nuclear Spin Flips in InAs Quantum Dots Using Detuned Optical Pulse Trains. Physical Review Letters. 102. 2009.
Effect of Crossing Geometry on the Plasmonic Behavior of Dielectric Core/Metal Sheath Nanowires. Applied Physics Letters. 94. 2009.
Fluorine-labeling as a diagnostic for thiol-ligand and gold nanocluster self-assembly. Analyst. 134(9):1790-1801.. 2009.
Identification and carrier dynamics of the dominant lifetime limiting defect in n(-) 4H-SiC epitaxial layers. Phys. Status Solidi A: Applications and Materials Science. 206:2257-2272.. 2009.
Plasmonic behavior of Ag/dielectric nanowires and the effect of geometry. J. Vac. Sci. Techn. . B 27(4). 2009.
AIN bandgap temperature dependence from its optical properties. Journal of Crystal Growth. 310. 2008.
Antimonide diodes for low-power THz mixers. Applied Physics Letters. 92. 2008.
Carrier Lifetime Measurements in n 4H-SiC Epilayers. Journal of Applied Physics. 103. 2008.
Electron spin dynamics due to hyperfine coupling in quantum dots. Physical Review B. 77. 2008.
Energy-level alignment in the adsorption of phosphonyl reagents on γ-Al2O3. Surface Science. 602:1938-1947.. 2008.
InAs-based Heterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material. Solid State Electronics. 52:1829-1832.. 2008.
Optical spin spin initialization and nondestructive measurement in a quantum dot molecule. Physical Review Letters. 101. 2008.
Optically induced spin gates in coupled quantum dots using the electron-hole exchange interaction. Physical Review B. 78. 2008.
Optically mapping the electronic structure of coupled quantum dots. Nature Physics. 4. 2008.
Reduced Graphene Oxide Molecular Sensors. Nano Letters. 8(10):3137-3140.. 2008.
Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057.. 2008.
Selective DNA-mediated assembly of gold nanoparticles on electroded substrates. Langmuir. 24(18):10245-10252.. 2008.