TitleEnhancement of Schottky Barrier Height to N-polar GaN using XeF2
Publication TypeConference Proceedings
Year of Publication2013
AuthorsKoehler A, Anderson TJ, Nepal N, Tadjer MJ, Hobart K, Eddy C, Kub FJ
Conference Name10th International Conference on Nitride Semiconductors
Date Published08/2013
Conference LocationWashington, DC
Publication Release Number

13-1231-3471