Found 7 results
Filters: Author is Saraswat, K C  [Clear All Filters]
2013
Yuan Z, Kumar A, Chen C-Y, Nainani A, Bennett B, John BBoos, Saraswat KC.  2013.  Antimonide-based Heterostructure p-channel MOSFETs with Ni-alloy Source/Drain. IEEE Electron Device Letters. 34(11)PDF icon 13-1231-2272.pdf (769.56 KB)
2012
Nainani A, Bennett B, John BBoos, Ancona M, Saraswat KC.  2012.  Enhancing hole mobility in III-V semiconductors. Journal of Applied Physics. 111PDF icon 11-1226-3271.pdf (809.08 KB)
2011
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett B, John BBoos, Saraswat KC.  2011.  Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning. Journal of Applied Physics. 109(11)PDF icon 11-1226-0720.pdf (488.47 KB)
Nainani A, Yuan Z, Krishnamohan T, Bennett B, John BBoos, Reason M, Ancona M, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1)PDF icon 11-1226-1829.pdf (804.41 KB)
Nainani A, Irisawa T, Yuan Z, Bennett B, John BBoos, Nishi Y, Saraswat KC.  2011.  Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb. IEEE Transactions on Electron Devices. 58(10)PDF icon 11-1226-1830.pdf (1.35 MB)
Nainani A, Irisawa T, Bennett B, John BBoos, Ancona M, Saraswat KC.  2011.  Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141.PDF icon 10-1226-1248.pdf (331.91 KB)
2010
Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett B, John BBoos, Ancona M, Nishi Y et al..  2010.  Development of high-k dielectric for Antimonides & a sub 350°C III-V pMOSFET outperforming Ge. IEDM. PDF icon 10-1226-3885.pdf (1.32 MB)