Found 7 results
Filters: Author is Saraswat, K C [Clear All Filters]
Antimonide-based Heterostructure p-channel MOSFETs with Ni-alloy Source/Drain. IEEE Electron Device Letters. 34(11)
13-1231-2272.pdf (769.56 KB)
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2013. 
Enhancing hole mobility in III-V semiconductors. Journal of Applied Physics. 111
11-1226-3271.pdf (809.08 KB)
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2012. 
Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning. Journal of Applied Physics. 109(11)
11-1226-0720.pdf (488.47 KB)
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2011. 
InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1)
11-1226-1829.pdf (804.41 KB)
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2011. 
Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb. IEEE Transactions on Electron Devices. 58(10)
11-1226-1830.pdf (1.35 MB)
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2011. 
Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141.
10-1226-1248.pdf (331.91 KB)
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2011. 