Found 43 results
Filters: Author is Bradley Boos John  [Clear All Filters]
2011
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett B, John BBoos, Saraswat KC.  2011.  Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning. Journal of Applied Physics. 109(11)PDF icon 11-1226-0720.pdf (488.47 KB)
Ali A, Madan H, Agrawal A, Ramirez I, Misra R, John BBoos, Bennett B, Lindemuth J, Datta S.  2011.  Enhancement Mode Antimonide Quantum Well MOSFETs With High Electron Mobility and GHz Small-Signal Switching Performance. IEEE Electron Device Letters. 32:11689-11691.PDF icon 11-1226-3596.pdf (510.44 KB)
Ali A, Madan H, Misra R, Agrawal A, Schiffer P, John BBoos, Bennett B, Datta S.  2011.  Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Non-Parabolicity Effect. IEEE Transactions on Electron Devices. 58:1397-1403.PDF icon 11-1226-4621.pdf (1.07 MB)
Xia L, John BBoos, Bennett B, Ancona M, del Alamo JA.  2011.  Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5)PDF icon 11-1226-0119.pdf (178.63 KB)
Nainani A, Yuan Z, Krishnamohan T, Bennett B, John BBoos, Reason M, Ancona M, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1)PDF icon 11-1226-1829.pdf (804.41 KB)
Nainani A, Irisawa T, Yuan Z, Bennett B, John BBoos, Nishi Y, Saraswat KC.  2011.  Optimization of the Al2O3/GaSb Interface and a High-Mobility GaSb. IEEE Transactions on Electron Devices. 58(10)PDF icon 11-1226-1830.pdf (1.35 MB)
Nainani A, Irisawa T, Bennett B, John BBoos, Ancona M, Saraswat KC.  2011.  Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141.PDF icon 10-1226-1248.pdf (331.91 KB)
2010
Ali A, Madan H, Misra R, Hwang E, Agrawal A, Ramirez I, Schiffer P, Jackson TN, Mohney SE, John BBoos et al..  2010.  Advanced Composite High-κ Gate Stack for Mixed Anion Arsenide-Antimonide Quantum Well Transistors. IEDM. PDF icon 10-1226-3867.pdf (1.49 MB)
Bennett B, Khan SA, John BBoos, Papanicolaou NA, Kuznetsov VV.  2010.  AlGaSb buffer layers for Sb-based transistors. Journal of Electronic Materials. 39:2196-2202.PDF icon 10-1226-1246.pdf (876 KB)
Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett B, John BBoos, Ancona M, Nishi Y et al..  2010.  Development of high-k dielectric for Antimonides & a sub 350°C III-V pMOSFET outperforming Ge. IEDM. PDF icon 10-1226-3885.pdf (1.32 MB)
Ali A, Madan H, Kirk AP, Zhao DA, Mourey DA, Hudait MK, Wallace RM, Jackson TN, Bennett B, John BBoos et al..  2010.  Fermi level unpinning of GaSb (001) using plasma enhanced atomic layer deposition of Al2O3 dielectric. Applied Physics Letters. 97PDF icon 10-1226-2230.pdf (475.2 KB)
Champlain J, Magno R, Bass R, Park D, John BBoos.  2010.  InAlAsSb/InGaSb Double-Heterojunction Bipolar Transistors with InAsSb Contact Layers. Electronics Letters. 46(19)PDF icon 10-1226-2595.pdf (76.21 KB)PDF icon 10-1226-2595-1.pdf (90.92 KB)
Reason M, Bennett B, Magno R, John BBoos.  2010.  Molecular beam epitaxial regrowth of InGaSb. Journal of Electronic Materials. 40(1):6-10.PDF icon 10-1226-3887.pdf (251.61 KB)
Ancona M, Bennett B, John BBoos.  2010.  Scaling Projections for Sb-Based p-Channel FETs. Solid State Electronics. 54:1349-1358.PDF icon 10-1226-0462.pdf (496.7 KB)

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