Ancona M.  2013.  Analyte Kinetics in a Nanocluster-Based Chemiresistor. Sensors and Actuators B-chemical. 177

Ancona M, Snow AW, Perkins FK, Pate B, Park D.  2013.  Analyte kinetics in a nanocluster-based chemiresistor: A case study . Sensors and Actuators B Chemical. 177:936-946. 12-1231-3480.pdf (2.51 MB)

Bennett B, Chick TF, Ancona M, John BBoos.  2013.  Enhanced hole mobility and density in GaSb quantum wells. Solid State Electronics. 79:274-280. 12-1231-2595.pdf (1.41 MB)

Guo L, Xia L, John BBoos, Bennett B, Ancona M, del Alamo JA.  2013.  Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy. Microsystems Annual Research Conference (MARC).

Nainani A, Bennett B, John BBoos, Ancona M, Saraswat KC.  2012.  Enhancing hole mobility in III-V semiconductors. Journal of Applied Physics. 111 11-1226-3271.pdf (809.08 KB)

Ancona M, Binari S, Meyer DJ.  2012.  Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation. Journal of Applied Physics. 111(7) 1.3698492.pdf (3 MB)

Snow AW, Ancona M, Park D.  2012.  Nanodimensionally Driven Analyte Response Reversal in Gold Nanocluster Chemiresistor Sensing. Langmuir. 28(44):15438-15443.

Ancona M.  2011.  Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices. Journal of Computational Electronics. 10(1-2):65-97. 10-1226-2227.pdf (1.3 MB)

Xia L, John BBoos, Bennett B, Ancona M, del Alamo JA.  2011.  Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5) 11-1226-0119.pdf (178.63 KB)

Nainani A, Yuan Z, Krishnamohan T, Bennett B, John BBoos, Reason M, Ancona M, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1) 11-1226-1829.pdf (804.41 KB)

Nainani A, Irisawa T, Bennett B, John BBoos, Ancona M, Saraswat KC.  2011.  Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141. 10-1226-1248.pdf (331.91 KB)

Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett B, John BBoos, Ancona M, Nishi Y et al..  2010.  Development of high-k dielectric for Antimonides & a sub 350°C III-V pMOSFET outperforming Ge. IEDM. 10-1226-3885.pdf (1.32 MB)

Ancona M.  2010.  Electron Transport in Graphene From a Diffusion-Drift Perspective. IEEE Transactions on Electron Devices. 57(3):681-689. 08-1226-3387.pdf (517.01 KB)

Ancona M, Bennett B, John BBoos.  2010.  Scaling Projections for Sb-Based p-Channel FETs. Solid State Electronics. 54:1349-1358. 10-1226-0462.pdf (496.7 KB)

Bennett B, Ancona M, John BBoos.  2009.  Compound semiconductors for low-power p-channel field-effect transistors. MRS Bulletin. 34:530-536. 09-1226-0733.pdf (775.41 KB)

Bennett B, Ancona M, Champlain J, Papanicolaou NA, John BBoos.  2009.  Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits. Journal of Crystal Growth. 312:37-40. 09-1226-1530.pdf (310.4 KB)

Snow AW, Foos EE, Coble MM, Jernigan GG, Ancona M.  2009.  Fluorine-labeling as a diagnostic for thiol-ligand and gold nanocluster self-assembly. Analyst. 134(9):1790-1801. 08-1226-2605.pdf (719.79 KB)

Magno R, Champlain J, Newman HS, Ancona M, Culbertson JC, Bennett B, John BBoos, Park D.  2008.  Antimonide diodes for low-power THz mixers. Applied Physics Letters. 92 08-1226-0814.pdf (83.84 KB)

Champlain J, Magno R, Ancona M, Newman HS, John BBoos.  2008.  InAs-based Heterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material. Solid State Electronics. 52:1829-1832. 08-1226-0209.pdf (273.29 KB)

John BBoos, Bennett B, Papanicolaou NA, Ancona M, Champlain J, Chou Y-C, Lange MD, Yang JM, Bass R, Park D et al..  2008.  Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057. 08-1226-0261.pdf (724.12 KB)

Sapsford KE, Park D, Goldman ER, Foos EE, Trammell SA, Lowy DA, Ancona M.  2008.  Selective DNA-mediated assembly of gold nanoparticles on electroded substrates. Langmuir. 24(18):10245-10252. 08-1226-0869.pdf (322.58 KB)

Bennett B, Ancona M, John BBoos, Canedy CB, Khan SA.  2008.  Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. Journal of Crystal Growth. 311:47-53. 08-1226-3141.pdf (608.05 KB)

John BBoos, Bennett B, Papanicolaou NA, Ancona M, Champlain J, Bass R, Shanabrook BV.  2007.  High mobility p-channel HFETs using strained Sb-based materials. Electronics Letters. 43(15):834-835. 07-1226-2532.pdf (121.35 KB)

Bennett B, John BBoos, Ancona M, Papanicolaou NA, Cooke GA, Kheyrandish H.  2007.  InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors. Journal of Electronic Materials. 36:99-104. 06-1226-3301.pdf (299.25 KB)

Bennett B, Ancona M, John BBoos, Shanabrook BV.  2007.  Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters. 91 07-1226-1320.pdf (505.32 KB)