Found 34 results
Filters: Author is Mario Ancona [Clear All Filters]
Analyte Kinetics in a Nanocluster-Based Chemiresistor. Sensors and Actuators B-chemical. 177
.
2013. Analyte kinetics in a nanocluster-based chemiresistor: A case study . Sensors and Actuators B Chemical. 177:936-946.
12-1231-3480.pdf (2.51 MB)
.
2013. 
Enhanced hole mobility and density in GaSb quantum wells. Solid State Electronics. 79:274-280.
12-1231-2595.pdf (1.41 MB)
.
2013. 
Epitaxial Growth of Cubic and Hexagonal InN Thin Films via Plasma-Assisted Atomic Layer Epitaxy. Microsystems Annual Research Conference (MARC).
.
2013. Enhancing hole mobility in III-V semiconductors. Journal of Applied Physics. 111
11-1226-3271.pdf (809.08 KB)
.
2012. 
Fully coupled thermoelectromechanical analysis of GaN high electron mobility transistor degradation. Journal of Applied Physics. 111(7)
1.3698492.pdf (3 MB)
.
2012. 
Nanodimensionally Driven Analyte Response Reversal in Gold Nanocluster Chemiresistor Sensing. Langmuir. 28(44):15438-15443.
.
2012. Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices. Journal of Computational Electronics. 10(1-2):65-97.
10-1226-2227.pdf (1.3 MB)
.
2011. 
Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5)
11-1226-0119.pdf (178.63 KB)
.
2011. 
InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1)
11-1226-1829.pdf (804.41 KB)
.
2011. 
Shubinov-de Haas oscillations in compressively-strained (In)GaSb quantum wells. Solid State Electronics. 62:138-141.
10-1226-1248.pdf (331.91 KB)
.
2011. 
Development of high-k dielectric for Antimonides & a sub 350°C III-V pMOSFET outperforming Ge. IEDM.
10-1226-3885.pdf (1.32 MB)
.
2010. 
Electron Transport in Graphene From a Diffusion-Drift Perspective. IEEE Transactions on Electron Devices. 57(3):681-689.
08-1226-3387.pdf (517.01 KB)
.
2010. 
Scaling Projections for Sb-Based p-Channel FETs. Solid State Electronics. 54:1349-1358.
10-1226-0462.pdf (496.7 KB)
.
2010. 
Compound semiconductors for low-power p-channel field-effect transistors. MRS Bulletin. 34:530-536.
09-1226-0733.pdf (775.41 KB)
.
2009. 
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits. Journal of Crystal Growth. 312:37-40.
09-1226-1530.pdf (310.4 KB)
.
2009. 
Fluorine-labeling as a diagnostic for thiol-ligand and gold nanocluster self-assembly. Analyst. 134(9):1790-1801.
08-1226-2605.pdf (719.79 KB)
.
2009. 
Antimonide diodes for low-power THz mixers. Applied Physics Letters. 92
08-1226-0814.pdf (83.84 KB)
.
2008. 
InAs-based Heterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material. Solid State Electronics. 52:1829-1832.
08-1226-0209.pdf (273.29 KB)
.
2008. 
Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057.
08-1226-0261.pdf (724.12 KB)
.
2008. 
Selective DNA-mediated assembly of gold nanoparticles on electroded substrates. Langmuir. 24(18):10245-10252.
08-1226-0869.pdf (322.58 KB)
.
2008. 
Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. Journal of Crystal Growth. 311:47-53.
08-1226-3141.pdf (608.05 KB)
.
2008. 
High mobility p-channel HFETs using strained Sb-based materials. Electronics Letters. 43(15):834-835.
07-1226-2532.pdf (121.35 KB)
.
2007. 
InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors. Journal of Electronic Materials. 36:99-104.
06-1226-3301.pdf (299.25 KB)
.
2007. 
Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters. 91
07-1226-1320.pdf (505.32 KB)
.
2007. 