Found 5 results
Filters: Author is Ali, A  [Clear All Filters]
2013
Ali A, Madan H, Barth MJ, John BBoos, Bennett B, Datta S.  2013.  Effects of Interface States on the Performance of Antimonide NMOSFETs. IEEE Electron Device Letters. 34:360-362.PDF icon 12-1231-3983.pdf (751.99 KB)
2011
Ali A, Madan H, Agrawal A, Ramirez I, Misra R, John BBoos, Bennett B, Lindemuth J, Datta S.  2011.  Enhancement Mode Antimonide Quantum Well MOSFETs With High Electron Mobility and GHz Small-Signal Switching Performance. IEEE Electron Device Letters. 32:11689-11691.PDF icon 11-1226-3596.pdf (510.44 KB)
Ali A, Madan H, Misra R, Agrawal A, Schiffer P, John BBoos, Bennett B, Datta S.  2011.  Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Non-Parabolicity Effect. IEEE Transactions on Electron Devices. 58:1397-1403.PDF icon 11-1226-4621.pdf (1.07 MB)
2010
Ali A, Madan H, Misra R, Hwang E, Agrawal A, Ramirez I, Schiffer P, Jackson TN, Mohney SE, John BBoos et al..  2010.  Advanced Composite High-κ Gate Stack for Mixed Anion Arsenide-Antimonide Quantum Well Transistors. IEDM. PDF icon 10-1226-3867.pdf (1.49 MB)
Ali A, Madan H, Kirk AP, Zhao DA, Mourey DA, Hudait MK, Wallace RM, Jackson TN, Bennett B, John BBoos et al..  2010.  Fermi level unpinning of GaSb (001) using plasma enhanced atomic layer deposition of Al2O3 dielectric. Applied Physics Letters. 97PDF icon 10-1226-2230.pdf (475.2 KB)