Found 5 results
Filters: Author is Ali, A [Clear All Filters]
Effects of Interface States on the Performance of Antimonide NMOSFETs. IEEE Electron Device Letters. 34:360-362.
12-1231-3983.pdf (751.99 KB)
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2013. 
Enhancement Mode Antimonide Quantum Well MOSFETs With High Electron Mobility and GHz Small-Signal Switching Performance. IEEE Electron Device Letters. 32:11689-11691.
11-1226-3596.pdf (510.44 KB)
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2011. 
Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Non-Parabolicity Effect. IEEE Transactions on Electron Devices. 58:1397-1403.
11-1226-4621.pdf (1.07 MB)
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2011. 
Advanced Composite High-κ Gate Stack for Mixed Anion Arsenide-Antimonide Quantum Well Transistors. IEDM.
10-1226-3867.pdf (1.49 MB)
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2010. 
Fermi level unpinning of GaSb (001) using plasma enhanced atomic layer deposition of Al2O3 dielectric. Applied Physics Letters. 97
10-1226-2230.pdf (475.2 KB)
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2010. 