Koehler A, Anderson TJ, Weaver B, Tadjer MJ, Hobart K, Kub FJ.  2013.  Degradation of Dynamic ON-Resistance of AlGaN/GaN HEMTs Under Proton Irradiation. The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Freitas J, Feigelson BN, Anderson TJ.  2013.  Efficient Incorporation of Mg in Solution Grown GaN Crystals. Applied Physics Express. 6(11) 13-1231-2456.pdf (2.26 MB)

Koehler A, Anderson TJ, Nepal N, Tadjer MJ, Hobart K, Eddy C, Kub FJ.  2013.  Enhancement of Schottky Barrier Height to N-polar GaN using XeF2. 10th International Conference on Nitride Semiconductors.

Jernigan GG, Anderson T, Robinson J, Caldwell J, Culbertson JC, Myers-Ward RL, Davidson A, Ancona MG, Wheeler V, Nyakiti L et al..  2012.  Bilayer Graphene by Bonding CVD Graphene to Epitaxial graphene. Journal of Vacuum Science and Technology B. 30

Anderson TJ, Tadjer MJ, Nepal N, Brazzini T, Gacevic Z, Martin-Horcajo S.  2012.  Electrical Characterization of Schottky Contacts to N-Polar GaN. Electronics Materials Conference 2012.

Anderson TJ, Tadjer MJ, Nepal N, Brazzini T, Gacevic Z, Martin-Horcajo S.  2012.  Electrical Measurement Under Atmospheric Conditions ob PbSe Nanocrystal Thin Films. Electronics Materials Conference 2012.

Anderson TJ, Tadjer MJ, Nepal N, Brazzini T, Gacevic Z, Martin-Horcajo S.  2012.  Electrical Measurements of PbSe nanocrystal films passivated by remote plasma atomic layer deposition of A12O3. Electronics Materials Conference 2012.

Anderson TJ, Tadjer MJ, Nepal N, Brazzini T, Gacevic Z, Martin-Horcajo S.  2012.  Electroluminescence Measurement Techniques for Radiation Effects Characterization of Solar Cells. Electronics Materials Conference 2012.

Anderson TJ, Tadjer MJ, Nepal N, Brazzini T, Gacevic Z, Martin-Horcajo S.  2012.  Electro-Thermal Simulation and Design of a 60 A, 4.5 kV Half-Bridge Si IGBT/SiC JBS Hybrid Power Module. Electronics Materials Conference 2012.

Anderson T.  2012.  Wide Bandgap Semiconductor Research Interests at Navy Laboratories. Applied Physics Letters. 100