Bennett B, Ancona M, John BBoos.  2009.  Compound semiconductors for low-power p-channel field-effect transistors. MRS Bulletin. 34:530-536. 09-1226-0733.pdf (775.41 KB)

Bennett B, Ancona M, Champlain J, Papanicolaou NA, John BBoos.  2009.  Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits. Journal of Crystal Growth. 312:37-40. 09-1226-1530.pdf (310.4 KB)

Magno R, Champlain J, Newman HS, Ancona M, Culbertson JC, Bennett B, John BBoos, Park D.  2008.  Antimonide diodes for low-power THz mixers. Applied Physics Letters. 92 08-1226-0814.pdf (83.84 KB)

Champlain J, Magno R, Ancona M, Newman HS, John BBoos.  2008.  InAs-based Heterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material. Solid State Electronics. 52:1829-1832. 08-1226-0209.pdf (273.29 KB)

John BBoos, Bennett B, Papanicolaou NA, Ancona M, Champlain J, Chou Y-C, Lange MD, Yang JM, Bass R, Park D et al..  2008.  Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057. 08-1226-0261.pdf (724.12 KB)

Bennett B, Ancona M, John BBoos, Canedy CB, Khan SA.  2008.  Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. Journal of Crystal Growth. 311:47-53. 08-1226-3141.pdf (608.05 KB)

John BBoos, Bennett B, Papanicolaou NA, Ancona M, Champlain J, Bass R, Shanabrook BV.  2007.  High mobility p-channel HFETs using strained Sb-based materials. Electronics Letters. 43(15):834-835. 07-1226-2532.pdf (121.35 KB)

Bennett B, John BBoos, Ancona M, Papanicolaou NA, Cooke GA, Kheyrandish H.  2007.  InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors. Journal of Electronic Materials. 36:99-104. 06-1226-3301.pdf (299.25 KB)

Champlain J, Magno R, John BBoos.  2007.  Low resistance, unannealed ohmic contacts to n-type InAs0.66Sb0.34. Electronics Letters. 43(23) 07-1226-2030.pdf (139.1 KB)

Bennett B, Ancona M, John BBoos, Shanabrook BV.  2007.  Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters. 91 07-1226-1320.pdf (505.32 KB)

Kruppa W, John BBoos, Bennett B, Papanicolaou NA, Park D, Bass R.  2006.  InAs HEMT narrowband amplifier with ultra-low power dissipation. Electronics Letters. 42:29-30. 06-1226-1344.pdf (114.58 KB)

Champlain J, Magno R, John BBoos.  2006.  Low Resistance, Unannealed, Ohmic Contacts to p-type In0.27Ga0.73Sb. J. Vac. Sci. Techn.. B 24(5) 05-1226-3191.pdf (75.47 KB)

Magno R, Glaser ER, Tinkham BP, Champlain J, John BBoos, Ancona M, Campbell PM.  2006.  Narrow Bandgap InGaSb, InAlAsSb Alloys for Electronic Devices. J. Vac. Sci. Techn.. B 24(3) 05-1226-4083.pdf (77.23 KB)

Bennett B, Magno R, John BBoos, Kruppa W, Ancona M.  2005.  Antimonide-Based Compound Semiconductors for Electronic Devices: A Review. Solid State Electronics. 49:1875-1895. 05-1226-2057.pdf (697.34 KB)

Magno R, John BBoos, Campbell PM, Bennett B, Glaser ER, Tinkham BP, Ancona M, Hobart KD, Park D, Papanicolaou NA.  2005.  InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor. Electronics Letters. 41(6) 04-1226-2333.pdf (445 KB)

Deal WR, Tsai R, Lange MD, John BBoos, Bennett B, Gutierrez A.  2005.  A W-band InAs/AlSb Low-Noise/Low-Power Amplifier. IEEE Microwave and Wireless Component Letters. 15:208-210. 04-1226-2332.pdf (365.42 KB)

Bennett B, Tinkham BP, John BBoos, Lange MD, Tsai R.  2004.  Materials growth for InAs high electron mobility transistors and circuits. J. Vac. Sci. Techn.. B 22:688-694. 03-1226-2264.pdf (552.11 KB)

Magno R, Bennett B, Ikossi K, Ancona M, Glaser ER, Papanicolaou NA, John BBoos, Shanabrook BV, Gutierrez A.  2003.  Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices. IEEE Lester Eastman Conference on High Performance Devices 2002. :288-296. 02-1221.1-1959.pdf (171.96 KB)