Found 43 results
Filters: Author is Bradley Boos John [Clear All Filters]
Compound semiconductors for low-power p-channel field-effect transistors. MRS Bulletin. 34:530-536.
09-1226-0733.pdf (775.41 KB)
.
2009. 
Demonstration of high-mobility electron and hole transport in a single InGaSb well for complementary circuits. Journal of Crystal Growth. 312:37-40.
09-1226-1530.pdf (310.4 KB)
.
2009. 
Antimonide diodes for low-power THz mixers. Applied Physics Letters. 92
08-1226-0814.pdf (83.84 KB)
.
2008. 
InAs-based Heterostructure Barrier Varactor Diodes with In0.3Al0.7As0.4Sb0.6 as the Barrier Material. Solid State Electronics. 52:1829-1832.
08-1226-0209.pdf (273.29 KB)
.
2008. 
Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057.
08-1226-0261.pdf (724.12 KB)
.
2008. 
Strained GaSb/AlAsSb quantum wells for p-channel field-effect transistors. Journal of Crystal Growth. 311:47-53.
08-1226-3141.pdf (608.05 KB)
.
2008. 
High mobility p-channel HFETs using strained Sb-based materials. Electronics Letters. 43(15):834-835.
07-1226-2532.pdf (121.35 KB)
.
2007. 
InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors. Journal of Electronic Materials. 36:99-104.
06-1226-3301.pdf (299.25 KB)
.
2007. 
Low resistance, unannealed ohmic contacts to n-type InAs0.66Sb0.34. Electronics Letters. 43(23)
07-1226-2030.pdf (139.1 KB)
.
2007. 
Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters. 91
07-1226-1320.pdf (505.32 KB)
.
2007. 
InAs HEMT narrowband amplifier with ultra-low power dissipation. Electronics Letters. 42:29-30.
06-1226-1344.pdf (114.58 KB)
.
2006. 
Low Resistance, Unannealed, Ohmic Contacts to p-type In0.27Ga0.73Sb. J. Vac. Sci. Techn.. B 24(5)
05-1226-3191.pdf (75.47 KB)
.
2006. 
Narrow Bandgap InGaSb, InAlAsSb Alloys for Electronic Devices. J. Vac. Sci. Techn.. B 24(3)
05-1226-4083.pdf (77.23 KB)
.
2006. 
Antimonide-Based Compound Semiconductors for Electronic Devices: A Review. Solid State Electronics. 49:1875-1895.
05-1226-2057.pdf (697.34 KB)
.
2005. 
InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor. Electronics Letters. 41(6)
04-1226-2333.pdf (445 KB)
.
2005. 
A W-band InAs/AlSb Low-Noise/Low-Power Amplifier. IEEE Microwave and Wireless Component Letters. 15:208-210.
04-1226-2332.pdf (365.42 KB)
.
2005. 
Materials growth for InAs high electron mobility transistors and circuits. J. Vac. Sci. Techn.. B 22:688-694.
03-1226-2264.pdf (552.11 KB)
.
2004. 
Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices. IEEE Lester Eastman Conference on High Performance Devices 2002. :288-296.
02-1221.1-1959.pdf (171.96 KB)
.
2003. 