Found 321 results
Improved chemical detection using single-walled carbon nanotube network capacitors. Sensors and Actuators A-Physical. 35:309-314.. 2007.
InAlSb/InAs/AlGaSb quantum well heterostructures for high-electron-mobility transistors. Journal of Electronic Materials. 36:99-104.. 2007.
Low resistance, unannealed ohmic contacts to n-type InAs0.66Sb0.34. Electronics Letters. 43(23). 2007.
Mixing of two-electron spin states in semiconductor quantum dot. Physical Review B. 75. 2007.
Mobility enhancement in strained p-InGaSb quantum wells. Applied Physics Letters. 91. 2007.
Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. Physica B. 401-402:327-330.. 2007.
Photoluminescence spectroscopy of the molecular biexciton in vertically stacked InAs-GaAs quantum dot pairs. Physical Review Letters. 99. 2007.
Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters. 90. 2007.
Quantum-Chemical Study of the Adsorption of DMMP and Sarin on γ-Al2O3. Journal of Physical Chemistry C. 111:3719-3728.. 2007.
Rare-earth chloride seeded growth of GaN nano- and micro-crystals. Applied Surface Science. 253:6157-6161.. 2007.
Study of the initial nucleation and growth of catalyst-free InAs and Ge nanowires. Applied Physics Letters. 90. 2007.
Surface-enhanced Raman spectroscopy of dielectric/metal nanowire composites. Applied Physics Letters. 90. 2007.
Theory of fast optical spin rotation in a quantum dot based on geometric phases and trapped states. Physical Review Letters. 99. 2007.
Annealing of Multivacancy Defects in 4H-SiC. Physical Review B. 74. 2006.
Chemical vapor detection using single-walled carbon nanotubes. Chemical Society Reviews. 35. 2006.
Determination of Conduction Band Offsets in Type-II In0.27Ga0.73Sb/InxAl1-xAsySb1-y Heterostructures grown by Molecular Beam Epitaxy. Phys. Rev. . B 74. 2006.
Electrically Tunable g Factors in Quantum Dot Molecular Spin States. Physical Review Letters. 97. 2006.
Electrically tunable g-factors in quantum dot molecular spin states. Physical Review Letters. 97. 2006.
Engineering Electron and Hole Tunneling with Asymmetric InAs Quantum Dot Molecules. Applied Physics Letters. 89. 2006.
Enhancement-mode metal-oxide-semiconductor single-leectron transistor on pure silicon. Applied Physics Letters. 89. 2006.
Functionalization of Indium Tin Oxide. Langmuir. 22:11113-11125.. 2006.
Growth and Characterization of single crystal InAs nanowire arrays and their application to plasmonics. SPIE. 6370. 2006.
InAs HEMT narrowband amplifier with ultra-low power dissipation. Electronics Letters. 42:29-30.. 2006.
Infrared Spectroscopic Study of O2 Interaction with Carbon Nanotubes. Langmuir. 22:2258-2263.. 2006.
Lifetime limiting defects in n-4H-SiC epilayers. Applied Physics Letters. 88. 2006.