Found 11 results
Filters: Author is Bass, R [Clear All Filters]
High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm EOT. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012. High-k Gate Dielectics for III-N MIS-HEMTs. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012. High-Power Broadband Cascaded-TWT Development. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012. Thermoelectroelastic Simulation of GaN Devices. Journal of Vacuum Science & Technology B. 30
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2012. Thermoelectromechanical Simulation of GaN HEMTs. Journal of Vacuum Science & Technology B. 30
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2012. Thin A12O3-TiO2 Nanolaminates: An investigation of Atomic Layer Deposited Hybrid Oxides for Gate Dieletrric Applications. Journal of Vacuum Science & Technology B. 30
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2012. InAlAsSb/InGaSb Double-Heterojunction Bipolar Transistors with InAsSb Contact Layers. Electronics Letters. 46(19)
10-1226-2595.pdf (76.21 KB)
10-1226-2595-1.pdf (90.92 KB)
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2010. 

Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057.
08-1226-0261.pdf (724.12 KB)
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2008. 
High mobility p-channel HFETs using strained Sb-based materials. Electronics Letters. 43(15):834-835.
07-1226-2532.pdf (121.35 KB)
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2007. 
InAs HEMT narrowband amplifier with ultra-low power dissipation. Electronics Letters. 42:29-30.
06-1226-1344.pdf (114.58 KB)
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2006. 
Scaling properties of gold nanocluster chemiresistor sensors, IEEE Sensors Journal, 6, 1403 (2006).. IEEE Sensors Journal. 6(6)
06-1226-1743.pdf (721.3 KB)
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2006. 