Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari SC, Gougousi T, Paskova T, Evans K.  2012.  High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm EOT. 48th Workshop on Compound Semiconductor Materials and Devices.

Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari SC, Gougousi T, Paskova T, Evans K.  2012.  High-k Gate Dielectics for III-N MIS-HEMTs. 48th Workshop on Compound Semiconductor Materials and Devices.

Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari SC, Gougousi T, Paskova T, Evans K.  2012.  High-Power Broadband Cascaded-TWT Development. 48th Workshop on Compound Semiconductor Materials and Devices.

Downey B, Meyer DJ, Bass R, Katzer DS, Binari SC.  2012.  Thermoelectroelastic Simulation of GaN Devices. Journal of Vacuum Science & Technology B. 30

Downey B, Meyer DJ, Bass R, Katzer DS, Binari SC.  2012.  Thermoelectromechanical Simulation of GaN HEMTs. Journal of Vacuum Science & Technology B. 30

Downey B, Meyer DJ, Bass R, Katzer DS, Binari SC.  2012.  Thin A12O3-TiO2 Nanolaminates: An investigation of Atomic Layer Deposited Hybrid Oxides for Gate Dieletrric Applications. Journal of Vacuum Science & Technology B. 30

Champlain J, Magno R, Bass R, Park D, John BBoos.  2010.  InAlAsSb/InGaSb Double-Heterojunction Bipolar Transistors with InAsSb Contact Layers. Electronics Letters. 46(19) 10-1226-2595.pdf (76.21 KB) 10-1226-2595-1.pdf (90.92 KB)

John BBoos, Bennett B, Papanicolaou NA, Ancona M, Champlain J, Chou Y-C, Lange MD, Yang JM, Bass R, Park D et al..  2008.  Sb-based n- and p-channel FETs for High-Speed, Low-Power Applications. IEICE Transactions on Electronics. E91-C:1050-1057. 08-1226-0261.pdf (724.12 KB)

John BBoos, Bennett B, Papanicolaou NA, Ancona M, Champlain J, Bass R, Shanabrook BV.  2007.  High mobility p-channel HFETs using strained Sb-based materials. Electronics Letters. 43(15):834-835. 07-1226-2532.pdf (121.35 KB)

Kruppa W, John BBoos, Bennett B, Papanicolaou NA, Park D, Bass R.  2006.  InAs HEMT narrowband amplifier with ultra-low power dissipation. Electronics Letters. 42:29-30. 06-1226-1344.pdf (114.58 KB)

Ancona M, Snow AW, Foos EE, Kruppa W, Bass R.  2006.  Scaling properties of gold nanocluster chemiresistor sensors, IEEE Sensors Journal, 6, 1403 (2006).. IEEE Sensors Journal. 6(6) 06-1226-1743.pdf (721.3 KB)