Found 18 results
Filters: Author is Jaime Freitas  [Clear All Filters]
2013
Freitas J, Feigelson BN, Anderson TJ.  2013.  Efficient Incorporation of Mg in Solution Grown GaN Crystals. Applied Physics Express. 6(11)PDF icon 13-1231-2456.pdf (2.26 MB)
Hite J, Twigg M, Freitas J, Mastro M, Vurgaftman I, Meyer J, O'Connor S, Condon N, Kub FJ, Bowman S et al..  2013.  Periodically Oriented GaN for Nonlinear Frequency Conversion. SPIE-Photonics West / LEDs XVII.
Hite J, Twigg M, Freitas J, Mastro M, Vurgaftman I, Meyer J, O'Connor S, Condon N, Kub FJ, Bowman S et al..  2013.  Perspective on Future Directions in III-N Semiconductor Research. SPIE-Photonics West / LEDs XVII.
2012
Klein PB, Nwagwu U, Edgar JH, Freitas J.  2012.  Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2. Journal of Applied Physics. 112(1)PDF icon 12-1231-0035.pdf (1.3 MB)
Freitas J.  2012.  Proton-irradiated A1GaN/GaN HEMT at 5 MeV Protons. 7th Multifunctional Materials Workshop.
Freitas J, Culbertson JC, Mastro M, Kumagai Y, Koukitu A.  2012.  Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):33-37.PDF icon 11-1226-3888.pdf (770.39 KB)
Freitas J, Mastro M, Glaser ER, Garces NY, Lee SK, Chung JH, K OD, Shim KB.  2012.  Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):27-32.PDF icon 11-1226-2571.pdf (1.07 MB)
2010
Maximenko S, Freitas J, Myers-Ward RL, Lew K-K, VanMil BL, Eddy C, Gaskill DK, Muzykov PG, Sudarshan TS.  2010.  Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers. Journal of Applied Physics. 108PDF icon 10-1226-0838.pdf (960.35 KB)
Freitas J, Tischler JG, Garces NY, Feigelson BN.  2010.  Optical probing of low-pressure solution grown GaN crystal properties. Journal of Crystal Growth. 312:2564-2568.PDF icon 10-1226-1111.pdf (595.86 KB)
Freitas J.  2010.  Properties of the state-of-the-art of bulk III-V Nitrides substrates and homoepitaxial layers. Journal of Physics D: Applied Physics. 43PDF icon 09-1226-3017.pdf (1.6 MB)
Freitas J, Mastro M, Imhoff EA, Tadjer MJ, Eddy C, Kub FJ.  2010.  Thick homoepitaxial GaN with low carrier concentration for high blocking voltage. Journal of Crystal Growth. 312:2616-2619.PDF icon 08-1226-0261.pdf (724.12 KB)
2009
Maximenko S, Freitas J, Klein PB, Shrivastava A, Sudarshan TS.  2009.  Cathodolumiensce study of the properties of stacking faults in 4H-SiC homoepitaxial layers. Applied Physics Letters. 94PDF icon 08-1226-3990.pdf (231.13 KB)
Maximenko S, Mazeina L, Picard YN, Freitas J, Bermudez VM, Prokes S.  2009.  Cathodoluminescence studies of the inhomogeneities in Sn-doped Ga2O3 nanowires. Nano Letters. 9PDF icon 09-1226-1851.pdf (10.5 MB)
2008
Silveira E, Freitas J, Schujman SB, Schowalter LJ.  2008.  AIN bandgap temperature dependence from its optical properties. Journal of Crystal Growth. 310PDF icon 08-1226-0573.pdf (256.89 KB)
Freitas J, Gowda M, Tischler JG, Kim J-H, Liu L, Hanser D.  2008.  Semi-insulating GaN substrates for high-frequency device fabrication. Journal of Crystal Growth. 310:3968-3972.PDF icon 08-1226-1056.pdf (878.13 KB)
2007
Glaser ER, Murthy M, Freitas J, Storm D, Zhou L, Smith DJ.  2007.  Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. Physica B. 401-402:327-330.PDF icon 07-1226-2427.pdf (200.55 KB)
Freitas J, Rowland LB, Kim J, Fatemi M.  2007.  Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters. 90PDF icon 07-1226-1832.pdf (171.51 KB)
Mastro M, Freitas J, Holm RT, Eddy C, Caldwell J, Liu K, Glembocki O, Henry RL, Kim J.  2007.  Rare-earth chloride seeded growth of GaN nano- and micro-crystals. Applied Surface Science. 253:6157-6161.PDF icon 06-1226-3187.pdf (1.47 MB)