Found 18 results
Filters: Author is Jaime Freitas [Clear All Filters]
Efficient Incorporation of Mg in Solution Grown GaN Crystals. Applied Physics Express. 6(11)
13-1231-2456.pdf (2.26 MB)
.
2013. 
Periodically Oriented GaN for Nonlinear Frequency Conversion. SPIE-Photonics West / LEDs XVII.
.
2013. Perspective on Future Directions in III-N Semiconductor Research. SPIE-Photonics West / LEDs XVII.
.
2013. Photoluminescence investigation of the indirect band gap and shallow impurities in icosahedral B12As2. Journal of Applied Physics. 112(1)
12-1231-0035.pdf (1.3 MB)
.
2012. 
Proton-irradiated A1GaN/GaN HEMT at 5 MeV Protons. 7th Multifunctional Materials Workshop.
.
2012. Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):33-37.
11-1226-3888.pdf (770.39 KB)
.
2012. 
Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):27-32.
11-1226-2571.pdf (1.07 MB)
.
2012. 
Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers. Journal of Applied Physics. 108
10-1226-0838.pdf (960.35 KB)
.
2010. 
Optical probing of low-pressure solution grown GaN crystal properties. Journal of Crystal Growth. 312:2564-2568.
10-1226-1111.pdf (595.86 KB)
.
2010. 
Properties of the state-of-the-art of bulk III-V Nitrides substrates and homoepitaxial layers. Journal of Physics D: Applied Physics. 43
09-1226-3017.pdf (1.6 MB)
.
2010. 
Thick homoepitaxial GaN with low carrier concentration for high blocking voltage. Journal of Crystal Growth. 312:2616-2619.
08-1226-0261.pdf (724.12 KB)
.
2010. 
Cathodolumiensce study of the properties of stacking faults in 4H-SiC homoepitaxial layers. Applied Physics Letters. 94
08-1226-3990.pdf (231.13 KB)
.
2009. 
Cathodoluminescence studies of the inhomogeneities in Sn-doped Ga2O3 nanowires. Nano Letters. 9
09-1226-1851.pdf (10.5 MB)
.
2009. 
AIN bandgap temperature dependence from its optical properties. Journal of Crystal Growth. 310
08-1226-0573.pdf (256.89 KB)
.
2008. 
Semi-insulating GaN substrates for high-frequency device fabrication. Journal of Crystal Growth. 310:3968-3972.
08-1226-1056.pdf (878.13 KB)
.
2008. 
Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. Physica B. 401-402:327-330.
07-1226-2427.pdf (200.55 KB)
.
2007. 
Properties of epitaxial GaN on refractory metal substrates. Applied Physics Letters. 90
07-1226-1832.pdf (171.51 KB)
.
2007. 
Rare-earth chloride seeded growth of GaN nano- and micro-crystals. Applied Surface Science. 253:6157-6161.
06-1226-3187.pdf (1.47 MB)
.
2007. 