Found 14 results
Filters: Author is Glaser, E R [Clear All Filters]
Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts. Journal of Nanomaterials.
260687.pdf (4.7 MB)
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2012. 
Optimization of Electrical Performance of Cu(In,Ga)Se2 Thin Film Solar Cells Sputtered from Quaternary Targets. 2012 Gordon Research Conference on Point Defects in Semiconductors.
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2012. p-type Diamond Positive Surface Photovoltage. APS March Meeting 2012.
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2012. Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):27-32.
11-1226-2571.pdf (1.07 MB)
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2012. 
Band-Edge Excitons in PbSe Nanocrystals and Nanorods. Phys. Rev. B. 82(245303)
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2010. Study of defect behaviour in Ga2O3 nanowires and nano-ribbons under reducing gas annealing conditions: applications to sensing. Int. J. Nanotechnol.. 5(4/5)
07-1226-1067.pdf (3.93 MB)
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2008. 
Compensation Mechanism in High Purity Semi-Insulating 4H-SiC. Journal of Applied Physics. 101
05-1226-3802.pdf (129.24 KB)
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2007. 
Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. Physica B. 401-402:327-330.
07-1226-2427.pdf (200.55 KB)
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2007. 
Annealing of Multivacancy Defects in 4H-SiC. Physical Review B. 74
06-1226-2387.pdf (1.06 MB)
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2006. 
Determination of Conduction Band Offsets in Type-II In0.27Ga0.73Sb/InxAl1-xAsySb1-y Heterostructures grown by Molecular Beam Epitaxy. Phys. Rev. . B 74
06-1226-3025.pdf (152.08 KB)
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2006. 
Narrow Bandgap InGaSb, InAlAsSb Alloys for Electronic Devices. J. Vac. Sci. Techn.. B 24(3)
05-1226-4083.pdf (77.23 KB)
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2006. 
Estimation of Residual Nitrogen Concentration in Semi-Insulating 4H-SiC Substrates via Low Temperature Photoluminescence. Applied Physics Letters. 86
04-1226-2265.pdf (57.12 KB)
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2005. 
InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor. Electronics Letters. 41(6)
04-1226-2333.pdf (445 KB)
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2005. 
Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices. IEEE Lester Eastman Conference on High Performance Devices 2002. :288-296.
02-1221.1-1959.pdf (171.96 KB)
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2003. 