Qi H, Glaser ER, Caldwell J, Prokes S.  2012.  Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts. Journal of Nanomaterials. 260687.pdf (4.7 MB)

Glaser ER.  2012.  Optimization of Electrical Performance of Cu(In,Ga)Se2 Thin Film Solar Cells Sputtered from Quaternary Targets. 2012 Gordon Research Conference on Point Defects in Semiconductors.

Glaser ER.  2012.  p-type Diamond Positive Surface Photovoltage. APS March Meeting 2012.

Freitas J, Mastro M, Glaser ER, Garces NY, Lee SK, Chung JH, K OD, Shim KB.  2012.  Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):27-32. 11-1226-2571.pdf (1.07 MB)

Tischler JG, Kennedy TA, Glaser ER, Efros AL, Foos EE, Boercker JE, Zega TJ, Stroud RM, Erwin SC.  2010.  Band-Edge Excitons in PbSe Nanocrystals and Nanorods. Phys. Rev. B. 82(245303)

Prokes S, Carlos WE, Glaser ER.  2008.  Study of defect behaviour in Ga2O3 nanowires and nano-ribbons under reducing gas annealing conditions: applications to sensing. Int. J. Nanotechnol.. 5(4/5) 07-1226-1067.pdf (3.93 MB)

Mitchel WC, Mitchel WC, Smith HE, Landis G, Smith SR, Glaser ER.  2007.  Compensation Mechanism in High Purity Semi-Insulating 4H-SiC. Journal of Applied Physics. 101 05-1226-3802.pdf (129.24 KB)

Glaser ER, Murthy M, Freitas J, Storm D, Zhou L, Smith DJ.  2007.  Optical and Magnetic Resonance Studies of Mg-doped GaN Homoepitaxial Layers Grown by Molecular Beam Epitaxy. Physica B. 401-402:327-330. 07-1226-2427.pdf (200.55 KB)

Carlos WE, Garces NY, Glaser ER, Fanton MA.  2006.  Annealing of Multivacancy Defects in 4H-SiC. Physical Review B. 74 06-1226-2387.pdf (1.06 MB)

Glaser ER, Magno R, Shanabrook BV, Tischler JG.  2006.  Determination of Conduction Band Offsets in Type-II In0.27Ga0.73Sb/InxAl1-xAsySb1-y Heterostructures grown by Molecular Beam Epitaxy. Phys. Rev. . B 74 06-1226-3025.pdf (152.08 KB)

Magno R, Glaser ER, Tinkham BP, Champlain J, John BBoos, Ancona M, Campbell PM.  2006.  Narrow Bandgap InGaSb, InAlAsSb Alloys for Electronic Devices. J. Vac. Sci. Techn.. B 24(3) 05-1226-4083.pdf (77.23 KB)

Glaser ER, Shanabrook BV, Carlos WE.  2005.  Estimation of Residual Nitrogen Concentration in Semi-Insulating 4H-SiC Substrates via Low Temperature Photoluminescence. Applied Physics Letters. 86 04-1226-2265.pdf (57.12 KB)

Magno R, John BBoos, Campbell PM, Bennett B, Glaser ER, Tinkham BP, Ancona M, Hobart KD, Park D, Papanicolaou NA.  2005.  InAlAsSb/InGaSb Double Heterojunction Bipolar Transistor. Electronics Letters. 41(6) 04-1226-2333.pdf (445 KB)

Magno R, Bennett B, Ikossi K, Ancona M, Glaser ER, Papanicolaou NA, John BBoos, Shanabrook BV, Gutierrez A.  2003.  Antimony-based Quaternary Alloys for High-Speed Low-Power Electronic Devices. IEEE Lester Eastman Conference on High Performance Devices 2002. :288-296. 02-1221.1-1959.pdf (171.96 KB)