Found 4 results
Filters: Author is Theodesia Gougousi  [Clear All Filters]
2012
Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari SC, Gougousi T, Paskova T, Evans K.  2012.  High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm EOT. 48th Workshop on Compound Semiconductor Materials and Devices.
Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari SC, Gougousi T, Paskova T, Evans K.  2012.  High-k Gate Dielectics for III-N MIS-HEMTs. 48th Workshop on Compound Semiconductor Materials and Devices.
Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari S, Gougousi T, Paskova T, Evans K.  2012.  High-k SrTiO3 Dielectric by Plasma-Assisted Atomic Layer Deposition. 48th Workshop on Compound Semiconductor Materials and Devices.
Meyer DJ, Deen D, Storm D, Ancona MG, Katzer DS, Bass R, Binari SC, Gougousi T, Paskova T, Evans K.  2012.  High-Power Broadband Cascaded-TWT Development. 48th Workshop on Compound Semiconductor Materials and Devices.