Found 4 results
Filters: Author is Theodesia Gougousi [Clear All Filters]
High quality HfO2/p-GaSb(001) metal-oxide-semiconductor capacitors with 0.8 nm EOT. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012. High-k Gate Dielectics for III-N MIS-HEMTs. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012. High-k SrTiO3 Dielectric by Plasma-Assisted Atomic Layer Deposition. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012. High-Power Broadband Cascaded-TWT Development. 48th Workshop on Compound Semiconductor Materials and Devices.
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2012.