Found 321 results
Freitas J, Culbertson JC, Mastro M, Kumagai Y, Koukitu A.  2012.  Structural and optical properties of thick freestanding AlN films prepared by hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):33-37.PDF icon 11-1226-3888.pdf (770.39 KB)
Freitas J, Mastro M, Glaser ER, Garces NY, Lee SK, Chung JH, K OD, Shim KB.  2012.  Structural and optical studies of thick freestanding GaN films deposited by Hydride vapor phase epitaxy. Journal of Crystal Growth. 350(1):27-32.PDF icon 11-1226-2571.pdf (1.07 MB)
Robinson J, Zalalutdinov MK, Junkermeier C, Culbertson JC, Reinecke T, Stine R, Sheehan PE, Houston BH, Snow ES.  2012.  Structural Transformations in Chemically Modified Graphene. Solid State Communications. 152:1990-1998.PDF icon robinson2012solidstatecomm.pdf (1.18 MB)
Lindsay L, Broido DA, Reinecke T.  2012.  Thermal Conductivity and Large Isotope Effect in GaN from First Principles . Physical Review B. 109(9)PDF icon 12-1231-3070.pdf (310.92 KB)
Downey B, Meyer DJ, Bass R, Katzer DS, Binari SC.  2012.  Thermoelectroelastic Simulation of GaN Devices. Journal of Vacuum Science & Technology B. 30
Downey B, Meyer DJ, Bass R, Katzer DS, Binari SC.  2012.  Thermoelectromechanical Simulation of GaN HEMTs. Journal of Vacuum Science & Technology B. 30
Downey B, Meyer DJ, Bass R, Katzer DS, Binari SC.  2012.  Thin A12O3-TiO2 Nanolaminates: An investigation of Atomic Layer Deposited Hybrid Oxides for Gate Dieletrric Applications. Journal of Vacuum Science & Technology B. 30
Jensen K, Lau YY, Lebowitz J, Luginsland J.  2012.  A transit Time Model of Space Charge and its Comparison to Experimental Data. 2012 IEEE 9th International Vacuum Electron Sources Conference, IVESC 2012.
Katzer DS, Meyer DJ, Storm D, Mittereder JA, Bermudez VM, Cheng SF, Jernigan GG, Binari S.  2012.  Ultra-high vacuum deposition and characterization of silicon nitride thin films. Journal of Vacuum Science & Technology B. 30(2)
Anderson T.  2012.  Wide Bandgap Semiconductor Research Interests at Navy Laboratories. Applied Physics Letters. 100
Pasour J.  2012.  Wide-range Mechanical Tunability of Graphene-based Materials. DEPS Symposium 2012.
Magno R, Champlain J, Newman HS, Park D.  2011.  Antimonide-based pN terahertz mixer diodes. J. Vac. Sci. Techn.. B 29(3)PDF icon 10-1226-4271.pdf (203.33 KB)
Carter SG, Economou S, Shabaev A, Bracker A.  2011.  Controlling the nuclear polarization in quantum dots using optical pulse shape. Physical Review B. 83PDF icon 10-1226-4261.pdf (571.62 KB)
Ancona M.  2011.  Density-gradient theory: a macroscopic approach to quantum confinement and tunneling in semiconductor devices. Journal of Computational Electronics. 10(1-2):65-97.PDF icon 10-1226-2227.pdf (1.3 MB)
Nainani A, Sun Y, Irisawa T, Yuan Z, Kobayashi M, Pianetta P, Bennett B, John BBoos, Saraswat KC.  2011.  Device quality Sb-based compound semiconductor surface: A comparative study of chemical cleaning. Journal of Applied Physics. 109(11)PDF icon 11-1226-0720.pdf (488.47 KB)
Bermudez VM, Robinson J.  2011.  Effects of Molecular Adsorption on the Electronic Structure of Single-Layer Graphene. Langmuir. 27(17):11026-11036.PDF icon 11-1226-1692.pdf (504.82 KB)
Barnes E, Economou S.  2011.  Electron-Nuclear Dynamics in a Quantum Dot under Nonunitary Electron Control. Physical Review Letters. 107PDF icon 11-1226-2433.pdf (356.22 KB)
Cunningham P, Boercker JE, Foos EE, Lumb MP, Smith AR, Tischler JG, Melinger JS.  2011.  Enhanced Multiple Exciton Generation in Quasi One-Dimensional Semiconductors. Nano Letters 11. :3476-3481.
Ali A, Madan H, Agrawal A, Ramirez I, Misra R, John BBoos, Bennett B, Lindemuth J, Datta S.  2011.  Enhancement Mode Antimonide Quantum Well MOSFETs With High Electron Mobility and GHz Small-Signal Switching Performance. IEEE Electron Device Letters. 32:11689-11691.PDF icon 11-1226-3596.pdf (510.44 KB)
Ali A, Madan H, Misra R, Agrawal A, Schiffer P, John BBoos, Bennett B, Datta S.  2011.  Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Non-Parabolicity Effect. IEEE Transactions on Electron Devices. 58:1397-1403.PDF icon 11-1226-4621.pdf (1.07 MB)
Friedman AL, Robinson J, Perkins FK, Campbell PM.  2011.  Extraordinary magnetoresistance in shunted chemical vapor deposition grown graphene devices. Applied Physics Letters. 99(2)PDF icon 11-1226-2676.pdf (150.18 KB)
Bermudez VM.  2011.  First-Principles Study of Adsorption of Dimethyl Methylphosphonate on TiO2 Anatase (001) Surface: Formation of a Stable Titanyl (TidO) Site. Journal of Physical Chemistry C. 115PDF icon 10-1226-4980.pdf (375.37 KB)
Prokes S, Glembocki O, Cleveland E, Qi H.  2011.  Growth of ZnO nanowires on retroreflector microspheres and the resulting light channeling and plasmonic properties. SPIE. 8106PDF icon 11-1226-3169.pdf (1.21 MB)
Xia L, John BBoos, Bennett B, Ancona M, del Alamo JA.  2011.  Hole Mobility Enhancement through <110> Uniaxial Strain in In0.41Ga0.59Sb Quantum-Well Field Effect Transistors. Applied Physics Letters. 98(5)PDF icon 11-1226-0119.pdf (178.63 KB)
Nainani A, Yuan Z, Krishnamohan T, Bennett B, John BBoos, Reason M, Ancona M, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1)PDF icon 11-1226-1829.pdf (804.41 KB)