Found 2 results
Filters: Author is Krishnamohan, T  [Clear All Filters]
2011
Nainani A, Yuan Z, Krishnamohan T, Bennett B, John BBoos, Reason M, Ancona M, Nishi Y, Saraswat KC.  2011.  InxGa1-xSb channel pMOSFETS: Effect of strain on heterostructure design. Journal of Applied Physics. 110(1)PDF icon 11-1226-1829.pdf (804.41 KB)
2010
Nainani A, Irisawa T, Yuan Z, Sun Y, Krishnamohan T, Reason M, Bennett B, John BBoos, Ancona M, Nishi Y et al..  2010.  Development of high-k dielectric for Antimonides & a sub 350°C III-V pMOSFET outperforming Ge. IEDM. PDF icon 10-1226-3885.pdf (1.32 MB)