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200508-N-NO204-0001.JPG Photo By: Tyler Growden

WASHINGTON, D.C. - A simplified view of the gallium nitride-based resonant tunneling diode developed at the U.S. Naval Research Laboratory’s Electronic Science and Technology Division and its performance characteristics. NRL researchers anticipate this RTD will enable technologies beyond 5G and created a process to deliver manufacturing yield of approximately 90%.


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This photograph is considered public domain and has been cleared for release. If you would like to republish please give the photographer appropriate credit.



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