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NRL NEWS


NRL Quantum Research Center Celebrates First Year of Research, Collaboration
By Paul Cage, U.S. Naval Research Laboratory Corporate Communications | July 15, 2021
The U.S. Naval Research Laboratory celebrated its first anniversary earlier this year as the Navy’s designated Quantum Information Research Center.
Petrovic Relieves Vigil as the 41st NRL Commander
By Ashley Wall, U.S. Naval Research Laboratory Corporate Communications | June 25, 2021
Capt. Gregory Petrovic relieved Capt. Ricardo Vigil and assumed command as the 41st commanding officer of the U.S. Naval Research Laboratory during a ceremony June 25, 2021.
Secrets Revealed in a Grain of Dust from the Moon Leads to Geologist’s Award
By Kevin McAndrews, U.S. Naval Research Laboratory Corporate Communications | June 23, 2021
Lunar samples of dust particles and rock have been brought back to Earth for more than half a century, ever since Neil Armstrong became the first person to step foot on the Moon in 1969. NRL geologist Kate Burgess used samples from the Apollo 17 mission during her microscopic research of what’s inside tiny grains of moon dust.
Adding Predictability to Fleet Communications During Solar Flares
By Paul Cage, U.S. Naval Research Laboratory Corporate Communications | June 15, 2021
Solar flares, from the Navy's perspective, impact operations due to disturbances in the ionosphere, changing the propagation of radio signals in the upper atmosphere.
NRL PRAM Mission: One Year and Still Going
By Paul Cage, U.S. Naval Research Laboratory Corporate Communications | June 10, 2021
It has been one year since U.S. Naval Research Laboratory engineers launched PRAM, the Photovoltaic Radio-frequency Antenna Module, aboard the Air Force X-37B Orbital Test Vehicle on May 17, 2020.
GaN Wide Bandgap Semiconductor Enabling 1200V and Beyond Power Switches, Now Commercially Available for 200 mm Large Scale Manufacturing
By J. Raynel Koch, U.S. Naval Research Laboratory Corporate Communications | June 7, 2021
The U.S. Naval Research Laboratory’s gallium nitride (GaN) wafers, also called large-area engineered substrates, can enable GaN to potentially be a displacement technology for silicon semiconductors used in microelectronics, particularly in power electronics.

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