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160606-N-N0204-002.JPG Photo By: Daniel Parry

WASHINGTON, D.C. - Graphical Plot: This plot displays the characteristic lengths of the system as a function of carrier density for three different implantation doses. The dotted line separates the weak localization regime (semiconductor) from the strong localization regime (insulator). As dose (measured by the Raman D/2D ratio), therefore nitrogen content, increases, the transition from weak to strong localization is suppressed near the charge neutrality point. These analyses, along with other measurements, indicate that the nitrogen-doped films are low-defect and that the bandstructure is tunable. (U.S. Naval Research Laboratory) RELEASED


This photograph is considered public domain and has been cleared for release. If you would like to republish please give the photographer appropriate credit.

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