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gallium nitride (GaN) wafers
Cem Basceri, QROMIS president and CEO, displays a 200 mm diameter 650V, E-mode gallium nitride (GaN) discrete power device wafer on a QST® (QROMIS Substrate Technology) substrate. (Courtesy photo by QROMIS)

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Photo by: QROMIS |  VIRIN: 190206-N-NO204-765.JPG